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Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

التفاصيل البيبلوغرافية
العنوان: Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
المؤلفون: You-Chen Weng, Ming-Yao Hsiao, Chun-Hsiung Lin, Yu-Pin Lan, Edward-Yi Chang
المصدر: Materials, Vol 16, Iss 9, p 3376 (2023)
بيانات النشر: MDPI AG, 2023.
سنة النشر: 2023
المجموعة: LCC:Technology
LCC:Electrical engineering. Electronics. Nuclear engineering
LCC:Engineering (General). Civil engineering (General)
LCC:Microscopy
LCC:Descriptive and experimental mechanics
مصطلحات موضوعية: AlGaN/GaN HEMT, high pressure, nucleation layer, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
الوصف: A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum ID and Gm (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1996-1944
Relation: https://www.mdpi.com/1996-1944/16/9/3376; https://doaj.org/toc/1996-1944
DOI: 10.3390/ma16093376
URL الوصول: https://doaj.org/article/d7aa34633dfc40909084e32350c4a1a2
رقم الأكسشن: edsdoj.7aa34633dfc40909084e32350c4a1a2
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:19961944
DOI:10.3390/ma16093376