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Indirect Measurement of Electron Energy Relaxation Time at Room Temperature in Two-Dimensional Heterostructured Semiconductors

التفاصيل البيبلوغرافية
العنوان: Indirect Measurement of Electron Energy Relaxation Time at Room Temperature in Two-Dimensional Heterostructured Semiconductors
المؤلفون: Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Maksimas Anbinderis
المصدر: Materials, Vol 15, Iss 9, p 3224 (2022)
بيانات النشر: MDPI AG, 2022.
سنة النشر: 2022
المجموعة: LCC:Technology
LCC:Electrical engineering. Electronics. Nuclear engineering
LCC:Engineering (General). Civil engineering (General)
LCC:Microscopy
LCC:Descriptive and experimental mechanics
مصطلحات موضوعية: electron energy relaxation time, two-dimensional electron gas, quantum well, microwave diode, voltage sensitivity, I-V characteristic, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
الوصف: Hot carriers are a critical issue in modern photovoltaics and miniaturized electronics. We present a study of hot electron energy relaxation in different two-dimensional electron gas (2DEG) structures and compare the measured values with regard to the dimensionality of the semiconductor formations. Asymmetrically necked structures containing different types of AlGaAs/GaAs single quantum wells, GaAs/InGaAs layers, or bulk highly and lowly doped GaAs formations were investigated. The research was performed in the dark and under white light illumination at room temperature. Electron energy relaxation time was estimated using two models of I-V characteristics analysis applied to a structure with n-n+ junction and a model of voltage sensitivity dependence on microwave frequency. The best results were obtained using the latter model, showing that the electron energy relaxation time in a single quantum well structure (2DEG structure) is twice as long as that in the bulk semiconductor.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1996-1944
Relation: https://www.mdpi.com/1996-1944/15/9/3224; https://doaj.org/toc/1996-1944
DOI: 10.3390/ma15093224
URL الوصول: https://doaj.org/article/7f58cc64e659450c94bb47e26635e13e
رقم الأكسشن: edsdoj.7f58cc64e659450c94bb47e26635e13e
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:19961944
DOI:10.3390/ma15093224