دورية أكاديمية
Indirect Measurement of Electron Energy Relaxation Time at Room Temperature in Two-Dimensional Heterostructured Semiconductors
العنوان: | Indirect Measurement of Electron Energy Relaxation Time at Room Temperature in Two-Dimensional Heterostructured Semiconductors |
---|---|
المؤلفون: | Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Maksimas Anbinderis |
المصدر: | Materials, Vol 15, Iss 9, p 3224 (2022) |
بيانات النشر: | MDPI AG, 2022. |
سنة النشر: | 2022 |
المجموعة: | LCC:Technology LCC:Electrical engineering. Electronics. Nuclear engineering LCC:Engineering (General). Civil engineering (General) LCC:Microscopy LCC:Descriptive and experimental mechanics |
مصطلحات موضوعية: | electron energy relaxation time, two-dimensional electron gas, quantum well, microwave diode, voltage sensitivity, I-V characteristic, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85 |
الوصف: | Hot carriers are a critical issue in modern photovoltaics and miniaturized electronics. We present a study of hot electron energy relaxation in different two-dimensional electron gas (2DEG) structures and compare the measured values with regard to the dimensionality of the semiconductor formations. Asymmetrically necked structures containing different types of AlGaAs/GaAs single quantum wells, GaAs/InGaAs layers, or bulk highly and lowly doped GaAs formations were investigated. The research was performed in the dark and under white light illumination at room temperature. Electron energy relaxation time was estimated using two models of I-V characteristics analysis applied to a structure with n-n+ junction and a model of voltage sensitivity dependence on microwave frequency. The best results were obtained using the latter model, showing that the electron energy relaxation time in a single quantum well structure (2DEG structure) is twice as long as that in the bulk semiconductor. |
نوع الوثيقة: | article |
وصف الملف: | electronic resource |
اللغة: | English |
تدمد: | 1996-1944 |
Relation: | https://www.mdpi.com/1996-1944/15/9/3224; https://doaj.org/toc/1996-1944 |
DOI: | 10.3390/ma15093224 |
URL الوصول: | https://doaj.org/article/7f58cc64e659450c94bb47e26635e13e |
رقم الأكسشن: | edsdoj.7f58cc64e659450c94bb47e26635e13e |
قاعدة البيانات: | Directory of Open Access Journals |
تدمد: | 19961944 |
---|---|
DOI: | 10.3390/ma15093224 |