دورية أكاديمية

Pore Morphology of Heavily Doped P-Type Porous Silicon

التفاصيل البيبلوغرافية
العنوان: Pore Morphology of Heavily Doped P-Type Porous Silicon
المؤلفون: David Martín-Sánchez, Salvador Ponce-Alcántara, Jaime García-Rupérez
المصدر: Proceedings, Vol 4, Iss 1, p 14 (2019)
بيانات النشر: MDPI AG, 2019.
سنة النشر: 2019
المجموعة: LCC:General Works
مصطلحات موضوعية: porous silicon, pore diameter, macropore, dimethylformamide, dimethylsulfoxide, General Works
الوصف: Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2504-3900
Relation: https://www.mdpi.com/2504-3900/4/1/14; https://doaj.org/toc/2504-3900
DOI: 10.3390/ecsa-5-05715
URL الوصول: https://doaj.org/article/8099c7219f964c4196e72179c0c455d8
رقم الأكسشن: edsdoj.8099c7219f964c4196e72179c0c455d8
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:25043900
DOI:10.3390/ecsa-5-05715