دورية أكاديمية

Completely annealing-free flexible Perovskite quantum dot solar cells employing UV-sintered Ga-doped SnO2 electron transport layers

التفاصيل البيبلوغرافية
العنوان: Completely annealing-free flexible Perovskite quantum dot solar cells employing UV-sintered Ga-doped SnO2 electron transport layers
المؤلفون: Wooyeon Kim, Jigeon Kim, Dayoung Kim, Bonkee Koo, Subin Yu, Yuelong Li, Younghoon Kim, Min Jae Ko
المصدر: npj Flexible Electronics, Vol 8, Iss 1, Pp 1-11 (2024)
بيانات النشر: Nature Portfolio, 2024.
سنة النشر: 2024
المجموعة: LCC:Electronics
LCC:Materials of engineering and construction. Mechanics of materials
مصطلحات موضوعية: Electronics, TK7800-8360, Materials of engineering and construction. Mechanics of materials, TA401-492
الوصف: Abstract The electron transport layer (ETL) is a critical component in perovskite quantum dot (PQD) solar cells, significantly impacting their photovoltaic performance and stability. Low-temperature ETL deposition methods are especially desirable for fabricating flexible solar cells on polymer substrates. Herein, we propose a room-temperature-processed tin oxide (SnO2) ETL preparation method for flexible PQD solar cells. The process involves synthesizing highly crystalline SnO2 nanocrystals stabilized with organic ligands, spin-coating their dispersion, followed by UV irradiation. The energy level of SnO2 is controlled by doping gallium ions to reduce the energy level mismatch with the PQD. The proposed ETL-based CsPbI3-PQD solar cell achieves a power conversion efficiency (PCE) of 12.70%, the highest PCE among reported flexible quantum dot solar cells, maintaining 94% of the initial PCE after 500 bending tests. Consequently, we demonstrate that a systemically designed ETL enhances the photovoltaic performance and mechanical stability of flexible optoelectronic devices.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2397-4621
Relation: https://doaj.org/toc/2397-4621
DOI: 10.1038/s41528-024-00305-3
URL الوصول: https://doaj.org/article/81c5b1cabc544024af48093a810a6d54
رقم الأكسشن: edsdoj.81c5b1cabc544024af48093a810a6d54
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:23974621
DOI:10.1038/s41528-024-00305-3