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CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis

التفاصيل البيبلوغرافية
العنوان: CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis
المؤلفون: T. Irisawa, N. Okada, W. Mizubayashi, T. Mori, W.-H. Chang, K. Koga, A. Ando, K. Endo, S. Sasaki, T. Endo, Y. Miyata
المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1159-1163 (2018)
بيانات النشر: IEEE, 2018.
سنة النشر: 2018
المجموعة: LCC:Electrical engineering. Electronics. Nuclear engineering
مصطلحات موضوعية: 2D layered materials, MX₂, metal dichalcogenide, TMDC, CVD, gas source, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
الوصف: Position and growth direction control in chemical vapor deposition (CVD) of WS2 and SnS2 by using patterned Si/SiO2 substrates has been demonstrated. It was found that step edges effectively worked as crystal nuclei and lateral crystal growth from the edges with a certain level of growth directionality was observed. Gas source CVD using industrially friendly precursors (WF6, SnCl4, and H2S) has also been developed and WS2 and SnS2 synthesis with wafer-scale uniformity have been obtained.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2168-6734
Relation: https://ieeexplore.ieee.org/document/8467305/; https://doaj.org/toc/2168-6734
DOI: 10.1109/JEDS.2018.2870893
URL الوصول: https://doaj.org/article/88dd6a6f706b487897c0a41b60b08c2b
رقم الأكسشن: edsdoj.88dd6a6f706b487897c0a41b60b08c2b
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:21686734
DOI:10.1109/JEDS.2018.2870893