دورية أكاديمية

Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors

التفاصيل البيبلوغرافية
العنوان: Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors
المؤلفون: Ji-Hoon Han, Sung Joon Min, Eun-Sang Lee, Joon Hyub Kim, Nam Ki Min
المصدر: Sensors, Vol 23, Iss 20, p 8390 (2023)
بيانات النشر: MDPI AG, 2023.
سنة النشر: 2023
المجموعة: LCC:Chemical technology
مصطلحات موضوعية: strain gauge, bulk micromachining, SiOG MEMS, glass frit bonding, pressure sensor, Chemical technology, TP1-1185
الوصف: Half-bridge silicon strain gauges are widely used in the fabrication of diaphragm-type high-pressure sensors, but in some applications, they suffer from low output sensitivity because of mounting position constraints. Through a special design and fabrication approach, a new half-bridge silicon strain gauge comprising one arc gauge responding to tangential strain and another linear gauge measuring radial strain was developed using Silicon-on-Glass (SiOG) substrate technology. The tangential gauge consists of grid patterns, such as the reciprocating arc of silicon piezoresistors on a thin glass substrate. When two half-bridges are connected to form a full bridge with arc-shaped gauges that respond to tangential strain, they have the advantage of providing much higher output sensitivity than a conventional half-bridge. Pressure sensors tested under pressure ranging from 0 to 50 bar at five different temperatures indicate a linear output with a typical sensitivity of approximately 16 mV/V/bar, a maximum zero shift of 0.05% FS, and a span shift of 0.03% FS. The higher output level of pressure sensing gauges will provide greater signal strength, thus maintaining a better signal-to-noise ratio than conventional pressure sensors. The offset and span shift curves are quite linear across the operating temperature range, giving the end user the advantage of using very simple algorithms for temperature compensation of offset and span shift.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1424-8220
Relation: https://www.mdpi.com/1424-8220/23/20/8390; https://doaj.org/toc/1424-8220
DOI: 10.3390/s23208390
URL الوصول: https://doaj.org/article/cc89fbdcedf04b88b29ec219fa956685
رقم الأكسشن: edsdoj.89fbdcedf04b88b29ec219fa956685
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:14248220
DOI:10.3390/s23208390