دورية أكاديمية
Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements
| العنوان: | Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements |
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| المؤلفون: | Nicholas C. Miller, Michael Elliott, Eythan Lam, Ryan Gilbert, Jansen Uyeda, Robert L. Coffie |
| المصدر: | IEEE Journal of Microwaves, Vol 3, Iss 3, Pp 1005-1013 (2023) |
| بيانات النشر: | IEEE, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Telecommunication LCC:Electric apparatus and materials. Electric circuits. Electric networks |
| مصطلحات موضوعية: | Calibration, load-pull, LRRM, measurements, scattering-parameters, TRL, Telecommunication, TK5101-6720, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4 |
| الوصف: | This article presents an empirical investigation of calibration effects on load-pull measurements collected on wafer and at W-band frequencies. An analysis of scattering parameter (S-parameter) measurements provides insight into how small-signal metrics germane to load pull are affected by choice of the calibration technique. It is found that off-wafer line-reflect-reflect-match (LRRM) calibrated measurements of the same transistor with different probes exhibit drastically different maximum small-signal gains compared to equivalent on-wafer multiline thru-reflect-line (mTRL) calibrated measurements. Load-pull measurements are heavily influenced by choice of calibration algorithm, and LRRM calibrated large-signal measurements collected with different waveguide probes yield variations in large-signal gain of over 2 dB and variations in peak PAE of over 24 percentage points. The equivalent on-wafer mTRL calibrated load-pull measurements collected with different waveguide probes are consistent to within 0.1 dB for large-signal gain and 1 percentage point for peak PAE. This work provides quantitative evidence that on-wafer mTRL calibration with well-designed calibration structures is preferred for large-signal measurements collected at millimeter-wave frequencies. If utilization of on-wafer mTRL calibration is not possible, this work suggests using similar measurement setups, i.e., waveguide probes, calibration standards, etc., for evaluating on-wafer unmatched transistors in a consistent manner. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2692-8388 |
| Relation: | https://ieeexplore.ieee.org/document/10143346/; https://doaj.org/toc/2692-8388 |
| DOI: | 10.1109/JMW.2023.3279014 |
| URL الوصول: | https://doaj.org/article/8b01641245874148b94e55f7635e47e4 |
| رقم الأكسشن: | edsdoj.8b01641245874148b94e55f7635e47e4 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 26928388 |
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| DOI: | 10.1109/JMW.2023.3279014 |