دورية أكاديمية

Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness

التفاصيل البيبلوغرافية
العنوان: Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness
المؤلفون: Minghua Guo, Zhenyu Wang, Yong Xu, Huaqing Huang, Yunyi Zang, Chang Liu, Wenhui Duan, Zhongxue Gan, Shou-Cheng Zhang, Ke He, Xucun Ma, Qikun Xue, Yayu Wang
المصدر: New Journal of Physics, Vol 18, Iss 1, p 015008 (2016)
بيانات النشر: IOP Publishing, 2016.
سنة النشر: 2016
المجموعة: LCC:Science
LCC:Physics
مصطلحات موضوعية: topological insulator, thermoelectricity, transport, Seebeck coefficient, Science, Physics, QC1-999
الوصف: We report thermoelectric transport studies on Bi _2 Se _3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi _2 Se _3 thin films. This work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1367-2630
Relation: https://doaj.org/toc/1367-2630
DOI: 10.1088/1367-2630/18/1/015008
URL الوصول: https://doaj.org/article/e8e7482a011845da9ff8982f12a8c452
رقم الأكسشن: edsdoj.8e7482a011845da9ff8982f12a8c452
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:13672630
DOI:10.1088/1367-2630/18/1/015008