دورية أكاديمية
Controlling the interfacial dipole via functionalization of quinoxaline-based small molecules for electron transport layer in organic light emitting diodes
العنوان: | Controlling the interfacial dipole via functionalization of quinoxaline-based small molecules for electron transport layer in organic light emitting diodes |
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المؤلفون: | Seok Woo Lee, Xiangyang Fan, Dong Ryeol Whang, Ji Won Jang, Hyosung Choi, Dong Wook Chang, Bo Ram Lee |
المصدر: | Journal of Information Display, Vol 24, Iss 3, Pp 189-198 (2023) |
بيانات النشر: | Taylor & Francis Group, 2023. |
سنة النشر: | 2023 |
المجموعة: | LCC:Computer engineering. Computer hardware |
مصطلحات موضوعية: | Small molecule, solution process, organic optoelectronic device, Computer engineering. Computer hardware, TK7885-7895 |
الوصف: | Optoelectronic devices with organic semiconductors, such as organic light-emitting diodes (OLEDs), have received much attention because they offer ease of processing and device flexibility. However, practical application of these devices is still hindered by relatively poor device performance and lack of cost-effective fabrication process, which represent properties largely determined by the molecular dipole moments of the organic molecules. In this study, we designed and prepared novel quinoxaline-phosphine oxide small molecules (QPSMs) as the electron transport layer (ETL) for the solution-processable OLEDs by tuning the end functional group of the aromatic QPSMs. A key design criterion was controlling the dipole moments of QPSMs, which confers (1) convenient deposition on the emission layer without further annealing through solubility in isopropanol and (2) improved electron injection/transport behavior through effective band level matching of the devices. In particular, the optimized OLEDs with (4-(2,3-bis(4-methoxyphenyl)quinoxalin-5-yl)phenyl)diphenylphosphine oxide (MQxTPPO1) exhibit external quantum efficiency (EQE) of 6.12%. Our results demonstrate the potential application of QPSMs as next-generation ETLs in organic semiconductors. |
نوع الوثيقة: | article |
وصف الملف: | electronic resource |
اللغة: | English |
تدمد: | 15980316 2158-1606 1598-0316 |
Relation: | https://doaj.org/toc/1598-0316; https://doaj.org/toc/2158-1606 |
DOI: | 10.1080/15980316.2023.2171145 |
URL الوصول: | https://doaj.org/article/8f7a2ee9cabe4716a47b67608de40369 |
رقم الأكسشن: | edsdoj.8f7a2ee9cabe4716a47b67608de40369 |
قاعدة البيانات: | Directory of Open Access Journals |
تدمد: | 15980316 21581606 |
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DOI: | 10.1080/15980316.2023.2171145 |