دورية أكاديمية

Controlling the interfacial dipole via functionalization of quinoxaline-based small molecules for electron transport layer in organic light emitting diodes

التفاصيل البيبلوغرافية
العنوان: Controlling the interfacial dipole via functionalization of quinoxaline-based small molecules for electron transport layer in organic light emitting diodes
المؤلفون: Seok Woo Lee, Xiangyang Fan, Dong Ryeol Whang, Ji Won Jang, Hyosung Choi, Dong Wook Chang, Bo Ram Lee
المصدر: Journal of Information Display, Vol 24, Iss 3, Pp 189-198 (2023)
بيانات النشر: Taylor & Francis Group, 2023.
سنة النشر: 2023
المجموعة: LCC:Computer engineering. Computer hardware
مصطلحات موضوعية: Small molecule, solution process, organic optoelectronic device, Computer engineering. Computer hardware, TK7885-7895
الوصف: Optoelectronic devices with organic semiconductors, such as organic light-emitting diodes (OLEDs), have received much attention because they offer ease of processing and device flexibility. However, practical application of these devices is still hindered by relatively poor device performance and lack of cost-effective fabrication process, which represent properties largely determined by the molecular dipole moments of the organic molecules. In this study, we designed and prepared novel quinoxaline-phosphine oxide small molecules (QPSMs) as the electron transport layer (ETL) for the solution-processable OLEDs by tuning the end functional group of the aromatic QPSMs. A key design criterion was controlling the dipole moments of QPSMs, which confers (1) convenient deposition on the emission layer without further annealing through solubility in isopropanol and (2) improved electron injection/transport behavior through effective band level matching of the devices. In particular, the optimized OLEDs with (4-(2,3-bis(4-methoxyphenyl)quinoxalin-5-yl)phenyl)diphenylphosphine oxide (MQxTPPO1) exhibit external quantum efficiency (EQE) of 6.12%. Our results demonstrate the potential application of QPSMs as next-generation ETLs in organic semiconductors.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 15980316
2158-1606
1598-0316
Relation: https://doaj.org/toc/1598-0316; https://doaj.org/toc/2158-1606
DOI: 10.1080/15980316.2023.2171145
URL الوصول: https://doaj.org/article/8f7a2ee9cabe4716a47b67608de40369
رقم الأكسشن: edsdoj.8f7a2ee9cabe4716a47b67608de40369
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:15980316
21581606
DOI:10.1080/15980316.2023.2171145