0.7- $\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits

التفاصيل البيبلوغرافية
العنوان:	0.7- $\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits
المؤلفون:	V. Nodjiadjim, M. Riet, C. Mismer, R. Hersent, F. Jorge, A. Konczykowska, J.-Y. Dupuy
المصدر:	IEEE Journal of the Electron Devices Society, Vol 7, Pp 748-752 (2019)
بيانات النشر:	IEEE, 2019.
سنة النشر:	2019
المجموعة:	LCC:Electrical engineering. Electronics. Nuclear engineering
مصطلحات موضوعية:	Heterojunction bipolar transistor, InP/GaInAs DHBT, integrated circuits, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
الوصف:	We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both fT and f MAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a very high speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing a speed record. A 5.4-Vpp 100-Gb/s distributed differential selector-driver, as well as a 4.3-Vpp 64-GBd 8-pulse-amplitude-modulation (PAM) (192 Gb/s) high-speed power digital-to-analog converter (DAC) were also realized in this technology.
نوع الوثيقة:	article
وصف الملف:	electronic resource
اللغة:	English
تدمد:	2168-6734
Relation:	https://ieeexplore.ieee.org/document/8762198/; https://doaj.org/toc/2168-6734
DOI:	10.1109/JEDS.2019.2928271
URL الوصول:	https://doaj.org/article/d958b83240d442b89994ac7fae319357
رقم الأكسشن:	edsdoj.958b83240d442b89994ac7fae319357
قاعدة البيانات:	Directory of Open Access Journals

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الوصف
تدمد:	21686734
DOI:	10.1109/JEDS.2019.2928271