دورية أكاديمية

Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd3P2 Quantum Dots

التفاصيل البيبلوغرافية
العنوان: Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd3P2 Quantum Dots
المؤلفون: Logan Smith, K. Elena Harbison, Benjamin T. Diroll, Igor Fedin
المصدر: Materials, Vol 16, Iss 19, p 6346 (2023)
بيانات النشر: MDPI AG, 2023.
سنة النشر: 2023
المجموعة: LCC:Technology
LCC:Electrical engineering. Electronics. Nuclear engineering
LCC:Engineering (General). Civil engineering (General)
LCC:Microscopy
LCC:Descriptive and experimental mechanics
مصطلحات موضوعية: near-IR emitters, II–V quantum dots, time-resolved photoluminescence, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
الوصف: Fast near-IR (NIR) emitters are highly valuable in telecommunications and biological imaging. The most established NIR emitters are epitaxially grown InxGa1−xAs quantum dots (QDs), but epitaxial growth has several disadvantages. Colloidal synthesis is a viable alternative that produces a few NIR-emitting materials, but they suffer from long photoluminescence (PL) times. These long PL times are intrinsic in some NIR materials (PbS, PbSe) but are attributed to emission from bright trapped carrier states in others. We show that Cd3P2 QDs possess substantial trap emission with radiative times >101 ns. Surface passivation through shell growth or coordination of Lewis acids is shown to accelerate the NIR emission from Cd3P2 QDs by decreasing the amount of trap emission. This finding brings us one step closer to the application of colloidally synthesized QDs as quantum emitters.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1996-1944
Relation: https://www.mdpi.com/1996-1944/16/19/6346; https://doaj.org/toc/1996-1944
DOI: 10.3390/ma16196346
URL الوصول: https://doaj.org/article/95a7131e9e764e858f45763dd0c182a3
رقم الأكسشن: edsdoj.95a7131e9e764e858f45763dd0c182a3
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:19961944
DOI:10.3390/ma16196346