دورية أكاديمية
The electronic structure of ε-Ga2O3
| العنوان: | The electronic structure of ε-Ga2O3 |
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| المؤلفون: | M. Mulazzi, F. Reichmann, A. Becker, W. M. Klesse, P. Alippi, V. Fiorentini, A. Parisini, M. Bosi, R. Fornari |
| المصدر: | APL Materials, Vol 7, Iss 2, Pp 022522-022522-6 (2019) |
| بيانات النشر: | AIP Publishing LLC, 2019. |
| سنة النشر: | 2019 |
| المجموعة: | LCC:Biotechnology LCC:Physics |
| مصطلحات موضوعية: | Biotechnology, TP248.13-248.65, Physics, QC1-999 |
| الوصف: | The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2166-532X |
| Relation: | https://doaj.org/toc/2166-532X |
| DOI: | 10.1063/1.5054395 |
| URL الوصول: | https://doaj.org/article/99193bbad9164c628109f39395984729 |
| رقم الأكسشن: | edsdoj.99193bbad9164c628109f39395984729 |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Scitation. 
Full Text Finder | تدمد: | 2166532X |
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| DOI: | 10.1063/1.5054395 |