دورية أكاديمية
Investigation of structural, morphological, thermal, and thermoelectric properties of Zn1−xCuxAl2O4 (0.0 ≤ x ≤ 0.1)
| العنوان: | Investigation of structural, morphological, thermal, and thermoelectric properties of Zn1−xCuxAl2O4 (0.0 ≤ x ≤ 0.1) |
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| المؤلفون: | S Radha, J Mani, R Rajkumar, M Arivanandhan, R Jayavel, G Anbalagan |
| المصدر: | Materials Research Express, Vol 10, Iss 2, p 025501 (2023) |
| بيانات النشر: | IOP Publishing, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Materials of engineering and construction. Mechanics of materials LCC:Chemical technology |
| مصطلحات موضوعية: | thermoelectric properties, spinel oxides, seebeck coefficient, figure of merit, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185 |
| الوصف: | Most promising oxide thermoelectric (TE) materials such as perovskites, layered oxide materials, Al-doped ZnO, etc, have been reported. In the present work, Zn _1− _x Cu _x Al _2 O _4 (0.0 ≤ x ≤ 0.1) samples were synthesized by a simple hydrothermal method. The structural, optical, morphological, and TE properties of Zn _1− _x Cu _x Al _2 O _4 (0.0 ≤ x ≤ 0.1) have been investigated. XRD analysis reveals that ZnAl _2 O _4 has a single-phase cubic structure and Cu is completely dissolved in the ZnAl _2 O _4 lattice. Thermal analysis shows that ZnAl _2 O _4 has high thermal stability up to 1000 °C. From the UV–vis DRS analysis, the energy band gap of ZnAl _2 O _4 decreased from 3.30 eV to 2.82 eV with increasing the content of Cu. Carrier concentration and mobility of the samples were measured by the Hall effect. The values of a carrier concentration of undoped ZnAl _2 O _4 and Zn _0.9 Cu _0.1 Al _2 O _4 are obtained to be 3.836 × 10 ^13 cm ^−3 and 3.3 × 10 ^16 cm ^−3 at 313 K and 9.6 × 10 ^13 cm ^−3 for pure and 5.5 × 10 ^16 cm ^−3 for Zn _0.9 Cu _0.1 Al _2 O _4 at 673 K. TE properties of the synthesized samples have been analyzed as a function of temperature. With the optimum values of Seebeck coefficient and electrical conductivity, Zn _0.9 Cu _0.1 Al _2 O _4 shows the highest power factor of 0.50 μ W/mK ^2 while the pure ZnAl _2 O _4 shows a maximum power factor of 0.19 μ W/mK ^2 at 673 K. The Zn _0.9 Cu _0.1 Al _2 O _4 exhibits a relatively high zT of 2.4 × 10 ^−4 at 673 K, while pure ZnAl _2 O _4 has a zT value of 0.4 × 10 ^−4 at 673 K. The obtained values reveal the improvement of TE properties by increasing the Cu content in the sample. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2053-1591 |
| Relation: | https://doaj.org/toc/2053-1591 |
| DOI: | 10.1088/2053-1591/acacea |
| URL الوصول: | https://doaj.org/article/9cc1bb7b535e4978b83c8ec319c4011b |
| رقم الأكسشن: | edsdoj.9cc1bb7b535e4978b83c8ec319c4011b |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 20531591 |
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| DOI: | 10.1088/2053-1591/acacea |