دورية أكاديمية
Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process
| العنوان: | Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process |
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| المؤلفون: | Nikolaos Aspiotis, Katrina Morgan, Benjamin März, Knut Müller-Caspary, Martin Ebert, Ed Weatherby, Mark E. Light, Chung-Che Huang, Daniel W. Hewak, Sayani Majumdar, Ioannis Zeimpekis |
| المصدر: | npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-11 (2023) |
| بيانات النشر: | Nature Portfolio, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Materials of engineering and construction. Mechanics of materials LCC:Chemistry |
| مصطلحات موضوعية: | Materials of engineering and construction. Mechanics of materials, TA401-492, Chemistry, QD1-999 |
| الوصف: | Abstract This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 107. In addition, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at ±5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2397-7132 |
| Relation: | https://doaj.org/toc/2397-7132 |
| DOI: | 10.1038/s41699-023-00379-z |
| URL الوصول: | https://doaj.org/article/9dd10522d2d54446b767855a1e8c5e7f |
| رقم الأكسشن: | edsdoj.9dd10522d2d54446b767855a1e8c5e7f |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 23977132 |
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| DOI: | 10.1038/s41699-023-00379-z |