دورية أكاديمية

E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained

التفاصيل البيبلوغرافية
العنوان: E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained
المؤلفون: Zhang Chao, Xu Da-Qing, Liu Shu-Lin, Liu Ning-Zhuang
المصدر: Advances in Condensed Matter Physics, Vol 2014 (2014)
بيانات النشر: Wiley, 2014.
سنة النشر: 2014
المجموعة: LCC:Physics
مصطلحات موضوعية: Physics, QC1-999
الوصف: Uniaxial strain technology is an effective way to improve the performance of the small size CMOS devices, by which carrier mobility can be enhanced. The E-k relation of the valence band in uniaxially strained Si is the theoretical basis for understanding and enhancing hole mobility. The solving procedure of the relation and its analytic expression were still lacking, and the compressive results of the valence band parameters in uniaxially strained Si were not found in the references. So, the E-k relation has been derived by taking strained Hamiltonian perturbation into account. And then the valence band parameters were obtained, including the energy levels at Γ point, the splitting energy, and hole effective masses. Our analytic models and quantized results will provide significant theoretical references for the understanding of the strained materials physics and its design.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1687-8108
1687-8124
Relation: https://doaj.org/toc/1687-8108; https://doaj.org/toc/1687-8124
DOI: 10.1155/2014/686303
URL الوصول: https://doaj.org/article/b436ed33d8b649fe9ce0b35e5640f679
رقم الأكسشن: edsdoj.b436ed33d8b649fe9ce0b35e5640f679
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:16878108
16878124
DOI:10.1155/2014/686303