دورية أكاديمية

A scheme for simulating multi-level phase change photonics materials

التفاصيل البيبلوغرافية
العنوان: A scheme for simulating multi-level phase change photonics materials
المؤلفون: Yunzheng Wang, Jing Ning, Li Lu, Michel Bosman, Robert E. Simpson
المصدر: npj Computational Materials, Vol 7, Iss 1, Pp 1-10 (2021)
بيانات النشر: Nature Portfolio, 2021.
سنة النشر: 2021
المجموعة: LCC:Materials of engineering and construction. Mechanics of materials
LCC:Computer software
مصطلحات موضوعية: Materials of engineering and construction. Mechanics of materials, TA401-492, Computer software, QA76.75-76.765
الوصف: Abstract Chalcogenide phase change materials (PCMs) have been extensively applied in data storage, and they are now being proposed for high resolution displays, holographic displays, reprogrammable photonics, and all-optical neural networks. These wide-ranging applications all exploit the radical property contrast between the PCMs’ different structural phases, extremely fast switching speed, long-term stability, and low energy consumption. Designing PCM photonic devices requires an accurate model to predict the response of the device during phase transitions. Here, we describe an approach that accurately predicts the microstructure and optical response of phase change materials during laser induced heating. The framework couples the Gillespie Cellular Automata approach for modelling phase transitions with effective medium theory and Fresnel equations. The accuracy of the approach is verified by comparing the PCM’s optical response and microstructure evolution with the results of nanosecond laser switching experiments. We anticipate that this approach to simulating the switching response of PCMs will become an important component for designing and simulating programmable photonics devices. The method is particularly important for predicting the multi-level optical response of PCMs, which is important for all-optical neural networks and PCM-programmable perceptrons.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2057-3960
Relation: https://doaj.org/toc/2057-3960
DOI: 10.1038/s41524-021-00655-w
URL الوصول: https://doaj.org/article/b5f228dc00b54e6c8c80143080f06015
رقم الأكسشن: edsdoj.b5f228dc00b54e6c8c80143080f06015
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:20573960
DOI:10.1038/s41524-021-00655-w