دورية أكاديمية

A model heterostructure with engineered Berry curvature

التفاصيل البيبلوغرافية
العنوان: A model heterostructure with engineered Berry curvature
المؤلفون: Nathaniel J. Schreiber, Ludi Miao, Berit H. Goodge, Lena F. Kourkoutis, Kyle M. Shen, Darrell G. Schlom
المصدر: APL Materials, Vol 11, Iss 6, Pp 061117-061117-7 (2023)
بيانات النشر: AIP Publishing LLC, 2023.
سنة النشر: 2023
المجموعة: LCC:Biotechnology
LCC:Physics
مصطلحات موضوعية: Biotechnology, TP248.13-248.65, Physics, QC1-999
الوصف: Molecular-beam epitaxy enables ultrathin functional materials to be combined in heterostructures to create emergent phenomena at the interface. Magnetic skyrmions are an example of an exciting phase found in such heterostructures. SrRuO3 and SrRuO3-based heterostructures have been at the center of the debate on whether a hump-like feature appearing in Hall resistivities is sufficient evidence to prove the presence of skyrmions in a material. To address the ambiguity, we synthesize a model heterostructure with engineered Berry curvature that combines, in parallel, a positive anomalous Hall effect (AHE) channel (a Sr0.6Ca0.4RuO3 layer) with a negative AHE channel (a SrRuO3 layer). We demonstrate that the two opposite AHE channels can be combined to artificially reproduce a “hump-like” feature, which closely resembles the hump-like feature typically attributed to the topological Hall effect and the presence of chiral spin textures, such as skyrmions. We compare our heterostructure with a parallel resistor model, where the inputs are the AHE data from individual Sr0.6Ca0.4RuO3 and SrRuO3 films. To check for the presence of skyrmions, we measure the current dependence, angle dependence, and minor loop dependence of Rhump in the heterostructure. Despite the clear hump, no evidence of skyrmions is found.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2166-532X
Relation: https://doaj.org/toc/2166-532X
DOI: 10.1063/5.0151126
URL الوصول: https://doaj.org/article/b972b0bcd5e24d50bfc211e3fe2e0ce7
رقم الأكسشن: edsdoj.b972b0bcd5e24d50bfc211e3fe2e0ce7
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:2166532X
DOI:10.1063/5.0151126