دورية أكاديمية

Enhancement of Silicon Solar Cell’s Performance using Plasmonic Ag Nps

التفاصيل البيبلوغرافية
العنوان: Enhancement of Silicon Solar Cell’s Performance using Plasmonic Ag Nps
المؤلفون: N.R. Abdulhameed, H.A. Salih, K.I. Hassoon, A.K. Ali
المصدر: Engineering and Technology Journal, Vol 35, Iss 1B, Pp 19-24 (2017)
بيانات النشر: Unviversity of Technology- Iraq, 2017.
سنة النشر: 2017
المجموعة: LCC:Science
LCC:Technology
مصطلحات موضوعية: silicon solar cell, laser ablation, ag nps, plasmonic absorption, Science, Technology
الوصف: In this paper, Silver nanoparticles (Ag NPs) were prepared by laser ablation in liquid (PLAL) technique for different laser energy in water. Then the Ag NPs were deposited on the surface of Si solar cells to enhance their plasmonic absorption. The UV-VIS, FTIR spectrometer, and the Atomic force microscope were used to study the optical properties, composition, and the surface morphology of the NPs, respectively. The atomic absorption spectroscopy was also used to find the amount of ablated material. It is found that after the thermal deposition of the water drops containing Ag NPs on the surface of Silicon solar cells, the short circuit current and the overall conversion efficiency (η) have been improved. The short circuit current density (Jsc) has been increased by 14% after the drop overcasting of Ag NPs (about 92 nm in size) on the surface of silicon solar cells. The relative increase in Jsc may be attributed to the enhance plasmonic absorption for the incident light due to the forward scattering of Ag NPs.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1681-6900
2412-0758
Relation: https://etj.uotechnology.edu.iq/article_133670_a1b95667de8e5c2c6178b1252d7ff784.pdf; https://doaj.org/toc/1681-6900; https://doaj.org/toc/2412-0758
DOI: 10.30684/etj.35.1B.4
URL الوصول: https://doaj.org/article/bacd6a4d4f0b4e7fbd807aa5a1a18a96
رقم الأكسشن: edsdoj.bacd6a4d4f0b4e7fbd807aa5a1a18a96
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:16816900
24120758
DOI:10.30684/etj.35.1B.4