Beyond 65FD-SOI, 28FD-SOI, and 22FD-SOI production granted technologies, SmartCut™ development supports both advanced FD-SOI and low temperature SOI roadmaps. Ultrathin SOI and BOX materials developments are reported, including 4-nm SOI and 15-nm BOX layers, with performances close to production-grade (SOI layer thickness variation at wafer and device scale, SOI layer defect density). To support 3-D sequential integration, layer transfer at low temperature (below 500 °C) with SmartCut is demonstrated, on the path to a cost effective option. Best in class-equivalent to Epi bulk-SOI layers thickness variability at device scale is demonstrated. Excellent SOI and BOX layers thickness uniformities at wafer level are also highlighted while layer integrity from surface to crystalline defect density point of view are already compliant with development grade requirements.
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