دورية أكاديمية

Amorphous metal oxide semiconductor thin film, analog memristor, and autonomous local learning for neuromorphic systems

التفاصيل البيبلوغرافية
العنوان: Amorphous metal oxide semiconductor thin film, analog memristor, and autonomous local learning for neuromorphic systems
المؤلفون: Mutsumi Kimura, Ryo Sumida, Ayata Kurasaki, Takahito Imai, Yuta Takishita, Yasuhiko Nakashima
المصدر: Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
بيانات النشر: Nature Portfolio, 2021.
سنة النشر: 2021
المجموعة: LCC:Medicine
LCC:Science
مصطلحات موضوعية: Medicine, Science
الوصف: Abstract Artificial intelligence is a promising concept in modern and future societies. Presently, software programs are used but with a bulky computer size and large power consumption. Conversely, hardware systems named neuromorphic systems are suggested, with a compact computer size and low power consumption. An important factor is the number of processing elements that can be integrated. In the present study, three decisive technologies are proposed: (1) amorphous metal oxide semiconductor thin films, one of which, Ga–Sn–O (GTO) thin film, is used. GTO thin film does not contain rare metals and can be deposited by a simple process at room temperature. Here, oxygen-poor and oxygen-rich layers are stacked. GTO memristors are formed at cross points in a crossbar array; (2) analog memristor, in which, continuous and infinite information can be memorized in a single device. Here, the electrical conductance gradually changes when a voltage is applied to the GTO memristor. This is the effect of the drift and diffusion of the oxygen vacancies (Vo); and (3) autonomous local learning, i.e., extra control circuits are not required since a single device autonomously modifies its own electrical characteristic. Finally, a neuromorphic system is assembled using the abovementioned three technologies. The function of the letter recognition is confirmed, which can be regarded as an associative memory, a typical artificial intelligence application.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2045-2322
Relation: https://doaj.org/toc/2045-2322
DOI: 10.1038/s41598-020-79806-w
URL الوصول: https://doaj.org/article/bdf9557e078a4dd2955f81d645aa4319
رقم الأكسشن: edsdoj.bdf9557e078a4dd2955f81d645aa4319
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:20452322
DOI:10.1038/s41598-020-79806-w