دورية أكاديمية

Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer

التفاصيل البيبلوغرافية
العنوان: Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer
المؤلفون: Yi-Lin Tsai, Sheng-Kai Huang, Huang-Hsiung Huang, Shu-Mei Yang, Kai-Ling Liang, Wei-Hung Kuo, Yen-Hsiang Fang, Chih-I Wu, Shou-Wei Wang, Hsiang-Yun Shih, Zhiyu Xu, Minkyu Cho, Shyh-Chiang Shen, Chien-Chung Lin
المصدر: IEEE Photonics Journal, Vol 12, Iss 6, Pp 1-9 (2020)
بيانات النشر: IEEE, 2020.
سنة النشر: 2020
المجموعة: LCC:Applied optics. Photonics
LCC:Optics. Light
مصطلحات موضوعية: GaN, micro LEDs, Ultra-violet emission, leakage current, Arrhenius plot, low temperature current-voltage characterization, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
الوصف: We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1943-0655
Relation: https://ieeexplore.ieee.org/document/9256288/; https://doaj.org/toc/1943-0655
DOI: 10.1109/JPHOT.2020.3037220
URL الوصول: https://doaj.org/article/bfe0c5b6110a40bbabc727e4414d710a
رقم الأكسشن: edsdoj.bfe0c5b6110a40bbabc727e4414d710a
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:19430655
DOI:10.1109/JPHOT.2020.3037220