دورية أكاديمية
Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques
| العنوان: | Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques |
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| المؤلفون: | S. David, J. Roque, N. Rochat, N. Bernier, L. Piot, R. Alcotte, T. Cerba, M. Martin, J. Moeyaert, Y. Bogumilowizc, S. Arnaud, F. Bertin, F. Bassani, T. Baron |
| المصدر: | APL Materials, Vol 4, Iss 5, Pp 056102-056102-6 (2016) |
| بيانات النشر: | AIP Publishing LLC, 2016. |
| سنة النشر: | 2016 |
| المجموعة: | LCC:Biotechnology LCC:Physics |
| مصطلحات موضوعية: | Biotechnology, TP248.13-248.65, Physics, QC1-999 |
| الوصف: | Structural and optical properties of InGaAs quantum well fins (QWFs) selectively grown on Si using the aspect ratio trapping (ART) method in 200 nm deep SiO2 trenches are studied. A new method combining cathodoluminescence, transmission electron microscopy, and precession electron diffraction techniques is developed to spatially correlate the presence of defects and/or strain with the light emission properties of a single InGaAs QWF. Luminescence losses and energy shifts observed at the nanoscale along InGaAs QWF are correlated with structural defects. We show that strain distortions measured around threading dislocations delimit both high and low luminescent areas. We also show that trapped dislocations on SiO2 sidewalls can also result in additional distortions. Both behaviors affect optical properties of QWF at the nanoscale. Our study highlights the need to improve the ART growth method to allow integration of new efficient III-V optoelectronic components on Si. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2166-532X |
| Relation: | https://doaj.org/toc/2166-532X |
| DOI: | 10.1063/1.4949761 |
| URL الوصول: | https://doaj.org/article/f189a257dbdf4a4b8133f8f6b1b4c9f5 |
| رقم الأكسشن: | edsdoj.f189a257dbdf4a4b8133f8f6b1b4c9f5 |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Scitation. 
Full Text Finder | تدمد: | 2166532X |
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| DOI: | 10.1063/1.4949761 |