دورية أكاديمية
Realization of Multi‐Level State and Artificial Synapses Function in Stacked (Ta/CoFeB/MgO)N Structures
| العنوان: | Realization of Multi‐Level State and Artificial Synapses Function in Stacked (Ta/CoFeB/MgO)N Structures |
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| المؤلفون: | Bo Zhang, Wenbo Lv, Yonghai Guo, Bo Wang, Keliu Luo, Wangda Li, Jiangwei Cao |
| المصدر: | Advanced Electronic Materials, Vol 9, Iss 2, Pp n/a-n/a (2023) |
| بيانات النشر: | Wiley-VCH, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Electric apparatus and materials. Electric circuits. Electric networks LCC:Physics |
| مصطلحات موضوعية: | artificial synapses, memristors, multi‐state storage, spin orbit torque, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999 |
| الوصف: | Abstract Spintronic devices can realize multi‐state storage and be used to simulate artificial synapses or artificial neurons, which makes them have promising application prospect in the field of artificial neural networks (ANN). This work investigates the current‐induced magnetization reversal in stacked (Ta/CoFeB/MgO)N structures and their application in ANN. It is demonstrated that the complete current‐induced magnetization reversal with large intermediate transition region can be achieved in the sample with N = 2. The magneto‐optical Kerr microscope imaging shows that the large transition region for the sample is ascribed to the “layer‐by‐layer” reversal, owing to the difference of the coercivity of two CoFeB layers. In addition, the simulation of artificial synapses and artificial neurons function based on current‐induced magnetization reversal in the sample is also demonstrated. These results substantiate the stacked (Ta/CoFeB/MgO)N structures as a promising platform for realizing the multi‐level state and artificial synapses function, and its potential application in the field of ANN. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2199-160X |
| Relation: | https://doaj.org/toc/2199-160X |
| DOI: | 10.1002/aelm.202200939 |
| URL الوصول: | https://doaj.org/article/f43d5f08122d4ed48e22d794dcfed34d |
| رقم الأكسشن: | edsdoj.f43d5f08122d4ed48e22d794dcfed34d |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 2199160X |
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| DOI: | 10.1002/aelm.202200939 |