دورية أكاديمية
Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
| العنوان: | Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe |
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| المؤلفون: | Xian-Bo Xiao, Qian Ye, Zheng-Fang Liu, Qing-Ping Wu, Yuan Li, Guo-Ping Ai |
| المصدر: | Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019) |
| بيانات النشر: | SpringerOpen, 2019. |
| سنة النشر: | 2019 |
| المجموعة: | LCC:Materials of engineering and construction. Mechanics of materials |
| مصطلحات موضوعية: | Monolayer InSe, Electric field, Indirect-direct-indirect band gap transition, Materials of engineering and construction. Mechanics of materials, TA401-492 |
| الوصف: | Abstract Electronic structures of monolayer InSe with a perpendicular electric field are investigated. Indirect-direct-indirect band gap transition is found in monolayer InSe as the electric field strength is increased continuously. Meanwhile, the global band gap is suppressed gradually to zero, indicating that semiconductor-metal transformation happens. The underlying mechanisms are revealed by analyzing both the orbital contributions to energy band and evolution of band edges. These findings may not only facilitate our further understanding of electronic characteristics of layered group III-VI semiconductors, but also provide useful guidance for designing optoelectronic devices. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1931-7573 1556-276X |
| Relation: | http://link.springer.com/article/10.1186/s11671-019-3162-0; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X |
| DOI: | 10.1186/s11671-019-3162-0 |
| URL الوصول: | https://doaj.org/article/ef65d4f4a2f0498dac89664b737477f1 |
| رقم الأكسشن: | edsdoj.f65d4f4a2f0498dac89664b737477f1 |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 19317573 1556276X |
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| DOI: | 10.1186/s11671-019-3162-0 |