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A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications

التفاصيل البيبلوغرافية
العنوان: A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications
المؤلفون: Yida Li, Alireza Alian, Maheswari Sivan, Li Huang, Kah Wee Ang, Dennis Lin, Dan Mocuta, Nadine Collaert, Aaron V.-Y. Thean
المصدر: APL Materials, Vol 7, Iss 3, Pp 031503-031503-8 (2019)
بيانات النشر: AIP Publishing LLC, 2019.
سنة النشر: 2019
المجموعة: LCC:Biotechnology
LCC:Physics
مصطلحات موضوعية: Biotechnology, TP248.13-248.65, Physics, QC1-999
الوصف: An ultra-thin (15 nm) InGaAs nanomembrane field-effect phototransistor is transferred entirely from a rigid InP substrate onto a flexible SU-8 on a polydimethylsiloxane substrate. The transferred InGaAs device exhibits wide-band spectral response tunability up to 1.8 µm, from the visible to near-infrared light. Using an epitaxial lift-off process of InGaAs-on-InP MOSHEMT, the transferred device is inverted with a fully exposed channel for photosensitivity enhancement, while retaining three terminals for photocurrent amplification and modulation. The photocurrent can be tuned ∼5 orders over a gate bias range of 6 V. On-state photo-responsivities of 350 A/W to 15 A/W for 0.6 µm and 1.8 µm of light, respectively, is measured, ∼2 × higher than existing silicon and III-V photodetectors. Furthermore, the device shows no electrical performance degradation when flexed down to 10-cm radius, demonstrating suitability for conformal surface sensor applications.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2166-532X
Relation: https://doaj.org/toc/2166-532X
DOI: 10.1063/1.5074181
URL الوصول: https://doaj.org/article/f77f7facc024464f890d9e1b54183d83
رقم الأكسشن: edsdoj.f77f7facc024464f890d9e1b54183d83
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:2166532X
DOI:10.1063/1.5074181