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Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

التفاصيل البيبلوغرافية
العنوان: Nanoporous Ge thin film production combining Ge sputtering and dopant implantation
المؤلفون: Jacques Perrin Toinin, Alain Portavoce, Khalid Hoummada, Michaël Texier, Maxime Bertoglio, Sandrine Bernardini, Marco Abbarchi, Lee Chow
المصدر: Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 336-342 (2015)
بيانات النشر: Beilstein-Institut, 2015.
سنة النشر: 2015
المجموعة: LCC:Technology
LCC:Chemical technology
LCC:Science
LCC:Physics
مصطلحات موضوعية: germanium, ion implantation, porous material, Technology, Chemical technology, TP1-1185, Science, Physics, QC1-999
الوصف: In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2190-4286
Relation: https://doaj.org/toc/2190-4286
DOI: 10.3762/bjnano.6.32
URL الوصول: https://doaj.org/article/faec7fcabec24ad1a132eb0bdfdd93bc
رقم الأكسشن: edsdoj.faec7fcabec24ad1a132eb0bdfdd93bc
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:21904286
DOI:10.3762/bjnano.6.32