دورية أكاديمية

Defect Passivation on Lead-Free CsSnI3 Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability

التفاصيل البيبلوغرافية
العنوان: Defect Passivation on Lead-Free CsSnI3 Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability
المؤلفون: Zheng Gao, Hai Zhou, Kailian Dong, Chen Wang, Jiayun Wei, Zhe Li, Jiashuai Li, Yongjie Liu, Jiang Zhao, Guojia Fang
المصدر: Nano-Micro Letters, Vol 14, Iss 1, Pp 1-10 (2022)
بيانات النشر: SpringerOpen, 2022.
سنة النشر: 2022
المجموعة: LCC:Technology
مصطلحات موضوعية: Pb-free, Perovskite, CsSnI3, Photodetector, Nanowire, Technology
الوصف: Abstract In recent years, Pb-free CsSnI3 perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much attention in photoelectric devices. However, deep level defects in CsSnI3, such as high density of tin vacancies, structural deformation of SnI6 − octahedra and oxidation of Sn2+ states, are the major challenge to achieve high-performance CsSnI3-based photoelectric devices with good stability. In this work, defect passivation method is adopted to solve the above issues, and the ultra-stable and high-performance CsSnI3 nanowires (NWs) photodetectors (PDs) are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt (BMIMCl) into perovskites. Through materials analysis and theoretical calculations, BMIM+ ions can effectively passivate the Sn-related defects and reduce the dark current of CsSnI3 NW PDs. To further reduce the dark current of the devices, the polymethyl methacrylate is introduced, and finally, the dual passivated CsSnI3 NWPDs show ultra-high performance with an ultra-low dark current of 2 × 10–11 A, a responsivity of up to 0.237 A W−1, a high detectivity of 1.18 × 1012 Jones and a linear dynamic range of 180 dB. Furthermore, the unpackaged devices exhibit ultra-high stability in device performance after 60 days of storage in air (25 °C, 50% humidity), with the device performance remaining above 90%.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2311-6706
2150-5551
Relation: https://doaj.org/toc/2311-6706; https://doaj.org/toc/2150-5551
DOI: 10.1007/s40820-022-00964-9
URL الوصول: https://doaj.org/article/fe223ab9f7644b2f8064b11aea288169
رقم الأكسشن: edsdoj.fe223ab9f7644b2f8064b11aea288169
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:23116706
21505551
DOI:10.1007/s40820-022-00964-9