دورية أكاديمية
Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation
| العنوان: | Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation |
|---|---|
| المؤلفون: | Meshram, A.D., Sengupta, A., Bhattacharyya, T.K., Dutta, G. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(2):454-460 Feb, 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
|---|---|
| DOI: | 10.1109/TED.2022.3232049 |