دورية أكاديمية
Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation
العنوان: | Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation |
---|---|
المؤلفون: | Meshram, A.D., Sengupta, A., Bhattacharyya, T.K., Dutta, G. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(2):454-460 Feb, 2023 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
---|---|
DOI: | 10.1109/TED.2022.3232049 |