دورية أكاديمية
24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiNx Layer
| العنوان: | 24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiNx Layer |
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| المؤلفون: | Kotani, J., Yaita, J., Homma, K., Ozaki, S., Yamada, A., Sato, M., Ohki, T., Nakamura, N. |
| المصدر: | IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 11:101-106 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 21686734 |
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| DOI: | 10.1109/JEDS.2023.3234235 |