A robust shallow trench isolation (STI) with SiN pull-back process for advanced DRAM technology

التفاصيل البيبلوغرافية
العنوان: A robust shallow trench isolation (STI) with SiN pull-back process for advanced DRAM technology
المؤلفون: Li, C.H., Tu, K.C., Chu, H.C., Chang, I.H., Liaw, W.R., Lee, H.F., Lien, W.Y., Tsai, M.H., Liang, W.J., Yeh, W.G., Chou, H.M., Chen, C.Y., Chi, M.H.
المصدر: 13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259) Advanced semiconductor manufacturing Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop. :21-26 2002
Relation: 13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780371585
9780780371583
DOI:10.1109/ASMC.2002.1001567