25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 107 for eFlash-type MRAM

التفاصيل البيبلوغرافية
العنوان: 25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 107 for eFlash-type MRAM
المؤلفون: Honjo, H., Nishioka, K., Miura, S., Naganuma, H., Watanabe, T., Nasuno, T., Tanigawa, T., Noguchi, Y., Inoue, H., Yasuhira, M., Ikeda, S., Endoh, T.
المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :10.3.1-10.3.4 Dec, 2022
Relation: 2022 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665489591
تدمد:2156017X
DOI:10.1109/IEDM45625.2022.10019412