Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling

التفاصيل البيبلوغرافية
العنوان: Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling
المؤلفون: Porret, C., Everaert, J.-L., Schaekers, M., Ragnarsson, L.-A., Hikavyy, A., Rosseel, E., Rengo, G., Loo, R., Khazaka, R., Givens, M., Piao, X., Mertens, S., Heylen, N., Mertens, H., De Carvalho Cavalcante, C. Toledo, Sterckx, G., Brus, S., Mehta, A. Nalin, Korytov, M., Batuk, D., Favia, P., Langer, R., Pourtois, G., Swerts, J., Litta, E. Dentoni, Horiguchi, N.
المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :34.1.1-34.1.4 Dec, 2022
Relation: 2022 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665489591
تدمد:2156017X
DOI:10.1109/IEDM45625.2022.10019501