دورية أكاديمية
Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO₂ Gate Dielectrics
| العنوان: | Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO₂ Gate Dielectrics |
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| المؤلفون: | Darmawi-Iskandar, P.K., Aaron, A.M., Zhang, E.X., Bhuva, B.L., Kauppila, J.S., Davidson, J.L., Alles, M.L., Fleetwood, D.M., Massengill, L.W. |
| المصدر: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(4):449-455 Apr, 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189499 15581578 |
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| DOI: | 10.1109/TNS.2023.3242644 |