دورية أكاديمية

Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

التفاصيل البيبلوغرافية
العنوان: Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier
المؤلفون: Wu, F., Wang, Y., Jian, G., Xu, G., Zhou, X., Guo, W., Du, J., Liu, Q., Dun, S., Yu, Z., Lv, Y., Feng, Z., Cai, S., Long, S.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(3):1199-1205 Mar, 2023
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189383
15579646
DOI:10.1109/TED.2023.3239062