التفاصيل البيبلوغرافية
| العنوان: |
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz |
| المؤلفون: |
Raghunathan, U. S., Sirohi, S., Ruparelia, V., Sharma, P. K., Ioannou, D. P., Jain, V., Kakara, H. K., Gedela, S., Vanukuru, V., Dongmo, P., Luce, C., Hazbun, R., Krishnasamy, R., Hwang, J., Levy, M., Welch, K., Liu, S., Cucci, B., Cole, S., Kantarovsky, J., Vallett, A., McCallum-Cook, I., Yu, M., Phelps, R., Divergilio, A., Sturm, A., Peters, M., Johnson, S., Rassel, R., Lagerquist, M., Kerbaugh, M., Newton, K., Pekarik, J., Liu, Q. |
| المصدر: |
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2022 IEEE. :232-235 Oct, 2022 |
| Relation: |
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
