Sub-10-nm Tunnel Field-Effect Transistor with Schottky Drain

التفاصيل البيبلوغرافية
العنوان: Sub-10-nm Tunnel Field-Effect Transistor with Schottky Drain
المؤلفون: Liu, Ying, Wang, Yuan, Shan, Chan, Ou-Yang, Lian-Ying, Wang, Shu-Rong, Ruan, Ping-Ting, Xu, Ge-Jing
المصدر: 2023 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) Electrical, Electronics and Computer Science (SCEECS), 2023 IEEE International Students' Conference on. :1-3 Feb, 2023
Relation: 2023 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350398748
تدمد:26880288
DOI:10.1109/SCEECS57921.2023.10062994