33.1 A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity

التفاصيل البيبلوغرافية
العنوان: 33.1 A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity
المؤلفون: Lee, Po-Hao, Lee, Chia-Fu, Shih, Yi-Chun, Lin, Hon-Jarn, Chang, Yen-An, Lu, Cheng-Han, Chen, Yu-Lin, Lo, Chieh-Pu, Chen, Chung-Chieh, Kuo, Cheng-Hsiung, Chou, Tan-Li, Wang, Chia-Yu, Wu, J. J., Wang, Roger, Chuang, Harry, Wang, Yih, Chih, Yu-Der, Chang, Tsung-Yung Jonathan
المصدر: 2023 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2023 IEEE International. :494-496 Feb, 2023
Relation: 2023 IEEE International Solid-State Circuits Conference (ISSCC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665490160
تدمد:23768606
DOI:10.1109/ISSCC42615.2023.10067837