Design and simulation of GaN devices and integrated circuits using ASM compact HEMT model for mixed-signal applications

التفاصيل البيبلوغرافية
العنوان: Design and simulation of GaN devices and integrated circuits using ASM compact HEMT model for mixed-signal applications
المؤلفون: Lu, Shenkai, Chen, Kaiwen, Liu, Jiabao, Cui, Pengju, Li, Ang, Liu, Wen
المصدر: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2022 19th China International Forum on. :61-64 Feb, 2023
Relation: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350346381
DOI:10.1109/SSLChinaIFWS57942.2023.10071042