مؤتمر
Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation
| العنوان: | Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation |
|---|---|
| المؤلفون: | Wu, Pei-Yu, Tsai, Xin-Ying, Chang, Ting-Chang, Tsai, Tsung-Ming, Sze, Simon M. |
| المصدر: | 2023 35th International Conference on Microelectronic Test Structure (ICMTS) Microelectronic Test Structure (ICMTS), 2023 35th International Conference on. :1-4 Mar, 2023 |
| Relation: | 2023 35th International Conference on Microelectronic Test Structure (ICMTS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9798350346534 9798350346527 |
|---|---|
| تدمد: | 21581029 |
| DOI: | 10.1109/ICMTS55420.2023.10094072 |