Variation-Tolerant Ferroelectric FET-based Ternary Content-Addressable Memories (TCAM) Cell for Meta-learning Application

التفاصيل البيبلوغرافية
العنوان: Variation-Tolerant Ferroelectric FET-based Ternary Content-Addressable Memories (TCAM) Cell for Meta-learning Application
المؤلفون: Chuang, Han-Fu, Hu, Vita Pi-Ho
المصدر: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2023 7th IEEE. :1-3 Mar, 2023
Relation: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350332520
DOI:10.1109/EDTM55494.2023.10103030