دورية أكاديمية
Effect of Dummy Gate Bias on Breakdown Voltage and Gate Charge of a Novel In0.53Ga0.47As/InP Trench-Gate Pentode Power Device
| العنوان: | Effect of Dummy Gate Bias on Breakdown Voltage and Gate Charge of a Novel In0.53Ga0.47As/InP Trench-Gate Pentode Power Device |
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| المؤلفون: | Sahoo, J., Mahapatra, R. |
| المصدر: | IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 23(2):269-275 Jun, 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 15304388 15582574 |
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| DOI: | 10.1109/TDMR.2023.3268163 |