دورية أكاديمية
Evaluation of Neutron Radiation Impact for 1200-V Class 4H-SiC MOSFET at Gate Switching Mode With TCAD Simulation
| العنوان: | Evaluation of Neutron Radiation Impact for 1200-V Class 4H-SiC MOSFET at Gate Switching Mode With TCAD Simulation |
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| المؤلفون: | Bae, D., Kim, K., Lee, H., Chung, S.S., Kih, J., Woo, S., Cho, C., Khan, S.A., Yang, C., Wender, S.A., Kim, Y. |
| المصدر: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(8):1852-1860 Aug, 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189499 15581578 |
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| DOI: | 10.1109/TNS.2023.3272918 |