The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper)

التفاصيل البيبلوغرافية
العنوان: The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper)
المؤلفون: Sangani, D., Diaz-Fortuny, J., Bury, E., Kaczer, B., Gielen, G.
المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-6 Mar, 2023
Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665456722
تدمد:19381891
DOI:10.1109/IRPS48203.2023.10118026