The maximum operating region in SiGe HBTs for RF power amplifiers

التفاصيل البيبلوغرافية
العنوان: The maximum operating region in SiGe HBTs for RF power amplifiers
المؤلفون: Inoue, A., Nakatsuka, S., Hattori, R., Matsuda, Y.
المصدر: 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) Microwave symposium digest Microwave Symposium Digest, 2002 IEEE MTT-S International. 2:1023-1026 vol.2 2002
Relation: Proceedings of 2002 International Microwave Symposium (MTT 2002)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780372395
9780780372399
تدمد:0149645X
DOI:10.1109/MWSYM.2002.1011805