Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs

التفاصيل البيبلوغرافية
العنوان:	Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs
المؤلفون:	Kim, Dongyoung, DeBoer, Skylar, Mancini, Stephen A, Isukapati, Sundar Babu, Lynch, Justin, Yun, Nick, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje
المصدر:	2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023
Relation:	2023 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات:	IEEE Xplore Digital Library