دورية أكاديمية
Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications
| العنوان: | Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications |
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| المؤلفون: | Then, H.W., Radosavljevic, M., Yu, Q., Latorre-Rey, A., Vora, H., Bader, S., Momson, I., Thomson, D., Beumer, M., Koirala, P., Peck, J., Oni, A., Hoff, T., Jordan, R., Michaelos, T., Nair, N., Nordeen, P., Vyatskikh, A., Ban, I., Zubair, A., Rami, S., Fischer, P. |
| المصدر: | IEEE Microwave and Wireless Technology Letters IEEE Microw. Wireless Tech. Lett. Microwave and Wireless Technology Letters, IEEE. 33(6):835-838 Jun, 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
| تدمد: | 2771957X 27719588 |
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| DOI: | 10.1109/LMWT.2023.3268184 |