دورية أكاديمية

Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs

التفاصيل البيبلوغرافية
العنوان: Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs
المؤلفون: Manikanthababu, N., Joishi, C., Biswas, J., Prajna, K., Asokan, K., Vas, J.V., Medwal, R., Meena, R.C., Lodha, S., Singh, R.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(7):3711-3717 Jul, 2023
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189383
15579646
DOI:10.1109/TED.2023.3271281