مؤتمر
Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment
| العنوان: | Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment |
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| المؤلفون: | Paul, N.C., Ohta, Y., Tezuka, D., Nasuno, M., Yamamura, Y., Inokuma, T., Iiyama, K., Takamiya, S. |
| المصدر: | Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :217-220 2002 |
| Relation: | Proceedings of 14th Indium Phosphide and Related Materials Conference (IPRM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780373200 9780780373204 |
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| تدمد: | 10928669 |
| DOI: | 10.1109/ICIPRM.2002.1014328 |