Electrical Characterization and Analysis of 4H-SiC Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

التفاصيل البيبلوغرافية
العنوان: Electrical Characterization and Analysis of 4H-SiC Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits
المؤلفون: Liu, Li, Wang, Jue, Wang, Zishi, Bai, Miaoguang, Li, Junze, Zhu, Zhengyun, Xu, Hongyi, Ren, Na, Guo, Qing, Sheng, Kuang
المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :366-369 May, 2023
Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350396829
تدمد:19460201
DOI:10.1109/ISPSD57135.2023.10147418