Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate

التفاصيل البيبلوغرافية
العنوان:	Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate
المؤلفون:	Nanjo, T., Yamamoto, S., Imazawa, T., Kiyoi, A., Shinagawa, T., Watahiki, T., Miura, N., Furuhashi, M., Nishikawa, K., Egawa, T.
المصدر:	2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :223-226 May, 2023
Relation:	2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات:	IEEE Xplore Digital Library